1650℃ Bridgman crystal growth furnace is mainly used in the field of semiconductor materials to grow various single crystals, including silicon, sapphire, silicon nitride, silicon carbide, etc. It can grow high-purity, high-quality and large-size single crystals for the production of semiconductor devices, lasers, optoelectronic devices, etc.
Technical parameters of Bridgman crystal growth furnace:
Product name | 1650℃ Bridgman single crystal growth furnace |
Product model | CY-CGF1650-Φ80-100×100×100-V-T |
Power supply | Maximum power：15KW |
Operating temperature | Maximum operating temperature：1650℃（<1小时） Continuous operating temperature：1600℃ |
Heating element | Silicon molybdenum rod |
Furnace tube | High purity alumina furnace tube, size：Φ80×1070mm |
Flange | Stainless steel sealing flange |
Sample table | Alumina sample stage size: Φ60×100mm A type B thermocouple is inserted into the bottom of the sample stage to measure the crucible temperature in real time |
Crucible loading | Automatic sample stage lifting, convenient for crucible placement/sampling, maximum stroke 700mm |
Heating zone | Three-temperature zone furnace, forming a large temperature gradient (each temperature zone is 100mm long, the total temperature zone is 300mm) |
Temperature control system | PID temperature control, 30 temperature rise and fall programs can be set With over-temperature and burnout protection Three B-type thermocouples |
Furnace travel | The maximum moving stroke of the furnace is 500mm |
Furnace travel speed | 0.03~3mm/H |
Vacuum pump | Double-stage rotary vane vacuum pump 1.1L/S |
Power supply | 220V 50HZ |
Water cooling | With a 10L water cooler |
Weight | 600kg |
Dimensions | 900X1000X3200mm |
