CY-MPC-2300 is a batch wafer barrel-type microwave resist stripping equipment, applied for photoresist removal after high-dose ion implantation, dry etching, wet chemical processing, sacrificial layer removal, SU-8 photoresist removal, etc. Freely moving electrons generate plasma, which enters the chamber and processes the photoresist on the surface of the wafers in a quartz boat. By applying a microwave frequency of 2.45 GHz to the walls of the vacuum chamber, a large amount of sustained plasma can be produced. The chamber is suitable for 4-6 inch wafers in a quartz boat.
CY-MPC-2300 provides fast, non-destructive plasma cleaning. The system's plasma cleaning effect is achieved through chemical reactions between the activated free radicals and the photoresist on the wafer surface.
Product Principle:
The process gas is ionized into plasma by applying an electric field. The "active" components of plasma include ions, electrons, atoms, free active groups, excited state nucleons (metastable states), photons, etc. Plasma treatment utilizes the properties of these active components to perform oxidation, reduction, decomposition, crosslinking, and polymerization, thereby altering the surface properties of the sample. This optimizes material surface performance and achieves the goals of cleaning, modification, etching, and more.
Industry Applications:
Pre-bonding Treatment for Chips: Removes surface contaminants, increases surface wettability, enhances colloidal fluidity, and ensures bonding capability with other materials. Oxide removal facilitates solder reflow, improves chip-to-substrate connection, reduces delamination, and enhances thermal dissipation performance.
Pre-Encapsulation Treatment: Removes surface contaminants to ensure strong bonding between the chip surface and encapsulation materials, reducing defects like delamination and bubbles.
Photoresist Removal: Removes residual photoresist and other organics, activates and roughens the wafer surface, and improves surface wettability.
Pre-Metal Bonding Treatment: Removes organic contaminants from metal pads, enhancing the strength and reliability of the bonding process. It also removes thin contamination layers, improving bonding strength and the uniformity of bond wire pull forces.
Product Advantages:
Flexible and adaptable fixture placement to accommodate irregular products.
Low-temperature plasma avoids thermal damage to products.
Electrically neutral plasma prevents electrical damage to products.
Efficient and uniform plasma output ensures effective resist stripping.
Product Parameters:
Product name | Microwave Plasma Cleaner |
Product model | CY-MPC-2300 |
Vacuum system | Cavity material | Quartz |
Cavity size | 250mm×460mm (diameter×depth) |
Vacuum degree | 15~45 PA |
Cavity leakage rate | ≦6 PA |
Background vacuum | 5PA |
Vacuum pump | Equipped with a molecular pump system |
Process Gas | Flow range | O2：1000sccm Ar：1000sccm |
Process gas circuit | （O2、Ar）+ 1 Road reservation |
Control system | CYKY self-developed professional control system |
Device size | Length 1000mm × depth 850mm × height 1700mm |
Power requirement | AC380V, 50/60Hz, 5-wire, 40A |
Microwave power supply | Power | 0~1250W |
Frequency | 2.45 GHz |
Microwave plasma cleaning and RF plasma cleaning are both technologies that utilize plasma (a partially ionized gas) for surface cleaning or modification of materials. Their main similarities and differences are as follows:
Similarities：
1. Working Principle: Both methods use the reactive species in plasma (such as ions and radicals) to physically and chemically interact with the material surface, thereby removing contaminants or modifying the surface.
2. Application Fields: Both are widely used in surface cleaning, modification, and etching, with applications in semiconductor manufacturing, medical device processing, and materials science.
3. Treatment Effects: Under appropriate conditions, both can effectively remove organic contaminants, oxide layers, or modify the surface to increase surface energy or improve adhesion properties.
Differences：
1. Energy Source and Operating Frequency:
- Microwave Plasma Cleaning: Uses microwaves as the energy source, typically operating at a frequency of around 2.45 GHz. Microwave plasmas usually have a higher density and lower electron temperature.
- RF Plasma Cleaning: Uses RF (radio frequency) energy, commonly at a frequency of 13.56 MHz. RF plasmas generally have a higher electron temperature and a wider energy distribution.
2. Plasma Characteristics:
- Microwave Plasma: Generally has a higher plasma density, producing higher densities of ions and radicals, making it suitable for larger-scale cleaning and processing tasks.
- RF Plasma: Has a higher electron temperature, typically used for surface treatments that require fine control.
3. Equipment and Cost:
- Microwave Plasma Cleaning Equipment: Usually more complex and costly, suitable for high-efficiency cleaning and processing in large-scale production.
- RF Plasma Cleaning Equipment: Relatively simpler and less expensive, ideal for laboratory-scale and small-batch production.
4. Application Characteristics:
- Microwave Plasma Cleaning: Due to its high plasma density, it is suitable for applications requiring efficient processing, such as quickly removing contaminants or treating large-area samples.
- RF Plasma Cleaning: More suitable for applications requiring precise control of processing conditions, such as fine etching or surface modification in semiconductor manufacturing.
In summary, while microwave plasma cleaning and RF plasma cleaning share many similarities in application and principles, they differ significantly in terms of energy source, plasma characteristics, equipment complexity, and application scenarios. The choice between the two depends on specific application requirements, such as cleaning efficiency, surface treatment precision, and cost control.
